R&d – embedded non volatile memory engineer

4 weeks ago

Tiruchirappalli, India Tata Electronics Full time

About The Business Tata Electronics Private Limited (TEPL) is a greenfield venture of the Tata Group with expertise in manufacturing precision components. Tata Electronics (a wholly owned subsidiary of Tata Sons Pvt. Ltd.) is building India’s first AI-enabled state-of-the-art Semiconductor Foundry. This facility will produce chips for applications such as power management IC, display drivers, microcontrollers (MCU) and high-performance computing logic, addressing the growing demand in markets such as automotive, computing and data storage, wireless communications and artificial intelligence. Tata Electronics is a subsidiary of the Tata group. The Tata Group operates in more than 100 countries across six continents, with the mission 'To improve the quality of life of the communities we serve globally, through long term stakeholder value creation based on leadership with Trust.’ Responsibilities Integration responsibilities to add e NVM (embedded Non Volatile Memory) Features to 28-110nm platform technologies including MTP and Flash . Work with IP providers, as needed, to implement these features. Design and Layout of bit cell and test chips to aid in device/technology optimization, rel assessment and SPICE model extraction Develop the e NVM process while meeting a diverse set of objectives (macro size, cost, endurance, retention, manufacturability, read/write speed, yield, etc) Work with designers to spec macros that are competitive Write test program to test bit cells and macros for yield and reliability. Optimize test program for reliability and performance. Present to customers, peers and executives Manage the overall project Travel could be required Essential Attributes Ability to manage semiconductor technology projects Able to work independently, self-motivated with a strong drive to win. Ability to work across diverse cross-functional teams spread across the world. Good communicator with inclusive style An avid learner, you approach challenges with curiosity and resilience, seeking data to help build understanding. You’re a collaborative team player, building relationships, humbly offering support and openly welcoming approaches. Innovative and creative, you proactively explore new ideas and adapt quickly to change. Qualifications M. S or Ph D in Electrical Engineering, Materials Science or equivalent Strong understanding of CMOS and e NVM device physics , process modules , yield improvement, failure mechanisms, analytical techniques (physical and electrical) Deep understanding of key e NVM technologies (charge trap, floating gate, RRAM, MRAM , etc). Understanding of technology parameters and figures of merit (bit cell size, macro size, endurance, retention, power, latency, mask count , etc); experience in achieving competitive performance Proven track record in delivering e NVM technologies into volume manufacturing Ability to lead cross-functional teams and achieve project completion within timeline and cost targets Ability to work across different cultures and geographies Good team player Innovation and competitive mindset Desired Experience Level 10+ years experience in the semiconductor industry, most of which will be in the memory field Proven track record of successfully developing new technologies into high volume production Proven problem solving skills using design of experiments and analytical tools

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