Advanced NAND Technology CMOS Device Characterization
2 weeks ago
Assist the development of next generation CMOS devices employed in the most ground breaking Memory and Compute in Memory products, by providing characterization support and optimizing scribe design. Responsible for developing novel CMOS solutions for the future generations of NAND memories necessary to meet the required array efficiency and data rate requirements as well as the product cadence timelines.
Job Description
Responsibilities will include, but not limited to:Ensure CMOS parameters are measured and monitored in a reliable manner (no outliers, reliable readings)Eliminate process – structure – measurement related interactions that negatively impact CMOS parameter monitoringOptimize scribe design for CMOS parameters in terms of area savings, performance, efficiency (measurement time)Optimize data acquisition for Small volume and high volume to have best possible statistical coverage of CMOS manufacturing lineResponsible that technode milestones are not gated by scribe / param related topics (SVC, MSC, VME)
Minimum Qualifications:
Master’s degree in Electrical Engineering or equivalent with at least 3-5 years of advanced CMOS experience, additional experience with NAND a plusSemiconductor industry experience is required, preferably in a top tier logic or memory companyGood understanding of semiconductor devices, processes and characterization techniques is requiredHands on experience with data analysis, device characterization and process integration is essentialOutstanding communication skills both written and verbalStrong record of planning and completion of complex projects
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