Gallium nitride rf power amplifier designer

Our client is India’s first Gallium Nitride (Ga N for short) deep-tech semiconductor product company for radio-frequency electronics and power electronics. Their vertical technology integration – from making Ga N wafers (materials), using their proprietary semiconductor manufacturing processes to realize Ga N components and their design – enables them to develop solutions for compact, efficient and high-power solutions across the strategic, telecom and consumer use-cases. We are seeking a talented Gallium Nitride (Ga N) RF Designer with proven expertise in designing high-performance power amplifiers to join in advancing Ga N technology for a multitude of use-cases. In this role, you will be pivotal in designing and developing high-efficiency Ga N power amplifiers for next-gen wireless transmit applications. You will tackle complex design challenges and work on state-of-the-art projects that push the boundaries of current technology. Responsibilities Innovative Design: Lead the design and optimization of Ga N power amplifiers which could be internally matched (IMFETs) devices, eval boards, hybrid MICs and MMICs, focusing on cutting-edge applications such as compact solid-state power amplifiers and linear point to point data links, among others. Leverage advanced tools and techniques to achieve superior performance metrics. Advanced Simulation: Use simulation tools to model and analyze RF circuit behaviours. Apply predictive analysis to pre-emptively address potential issues and enhance design robustness. Hands-On assembly, fabrication and Testing: Collaborate closely with fabrication and assembly teams, both in-house and external, to oversee the production of power amplifiers. Develop and implement rigorous testing protocols to validate performance against high standards. Collaborative Innovation: Work alongside a multidisciplinary team to bring to bear RF circuit design requirements to the materials, process, device and packaging & assembly teams. Contribute to brainstorming sessions and technical reviews to drive project success. Documentation and Communication: Produce comprehensive design documentation and reports. Effectively communicate technical insights and progress to stakeholders and project teams, facilitating informed decision-making. Qualifications Education: Master’s or Ph D in EE/ECE/E& I Engineering, Microwave Engineering, or related field. Experience: At least 2+ years of experience post-education in RF design with a focus on power amplifiers. Proven ability to work with foundry PDKs towards high-efficiency PA designs and PA product development is essential. Technical Expertise: Deep knowledge of RF PA design. Background in Ga N technology is desirable. Proficiency in advanced simulation tools like Keysight ADS, HFSS and CST. Experience with high-efficiency PA design is preferrable. Analytical Skills: Strong ability to analyze and comprehend RF device level measurement and simulation data to solve intricate design problems on a stringent timeline. Communication Skills: Excellent verbal and written communication skills, with experience presenting technical information to diverse audiences. Preferred Qualifications: Experience with RF PA design and specifically Ga N PA design would be preferable. Background in PA design for strategic and telecom sector. What We Offer: Competitive salary with performance-based bonuses and ESOPs. Comprehensive benefits package including health insurance and retirals. Opportunities for professional growth through mentorship, training, and career advancement programs. A tightly-knit, collaborative and inclusive work environment where innovation is expected & encouraged.