R&D – Fellow, Device Engineering

Tata Electronics Private Limited (TEPL) is a greenfield venture of the Tata Group with expertise in manufacturing precision components. Tata Electronics (a wholly owned subsidiary of Tata Sons Pvt. Ltd.) is building India’s first AI-enabled state-of-the-art Semiconductor Foundry. This facility will produce chips for applications such as power management IC, display drivers, microcontrollers (MCU) and high-performance computing logic, addressing the growing demand in markets such as automotive, computing and data storage, wireless communications and artificial intelligence. Tata Electronics is a subsidiary of the Tata group. The Tata Group operates in more than 100 countries across six continents, with the mission 'To improve the quality of life of the communities we serve globally, through long term stakeholder value creation based on leadership with Trust.’Responsibilities: Device Engineering responsibilities for transfer of 28-90nm technologies from partner facilities. Work with Fab integration team to enable smooth transfer Device Engineering responsibilities for feature additions and improvements to 28-90nm technologies (improving leakage, performance, RF/Power FOM’s, Auto Grade Qualification, etc) Assist Business team in performance targets and cost analysis Work with Integration team on test chip layouts Responsible for meeting project performance requirements Build and lead a cross functional team across diverse geographies Build strong customer relationships based on confidence in TEPL technical capabilities Competitor benchmarking and Roadmap development Presentation to internal and customer senior executives Travel – as necessaryEssential Attributes: Ability to manage, mentor, and lead a team of highly motivated professionals. Able to work independently, self-motivated with a strong drive to win. Team player with the ability to work across diverse cross-functional teams spread across the world. Leadership skills to influence all levels of the organization. You’re inclusive, adapting your style to the situation and diverse global norms of our people. An avid learner, you approach challenges with curiosity and resilience, seeking data to help build understanding. You’re collaborative, building relationships, humbly offering support and openly welcoming approaches. Innovative and creative, you proactively explore new ideas and adapt quickly to change.Qualifications: M.S or PhD in Electrical Engineering, Engineering Physics, Materials Science or equivalent Strong understanding ofdevice physics, process modules, yield improvement, failure mechanisms, analytical techniques (physical and electrical) Can guide TCAD and compact modelling teams Proven track record in developing and transferring technologies into high volume manufacturing Deep knowledge ofCMOS, SRAM and eNVM parameters and figures of merit ; experience in achieving competitive performance Understanding of transistor physics and fabrication details especially planar MOSFET and BJT. Ability to optimize transistors based on different implant and other process steps Can guide team to design and layout E-test structures and analyze/interpret data from these structures Familiarity with Finfet structures Ability to lead cross-functional teams and achieve project completion within timeline and cost targets Ability to work across different cultures and geographies Innovation mindsetDesired Experience Level: 15+ years experience in the semiconductor industry Proven track record of successfully developing new technologies into high volume production Proven problem solving skills using design of experiments and analytical tools